| PART |
Description |
Maker |
| EIB1718A-1P |
17.3-18.1GHz, 1W Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| PE4246 |
Absorbtive SPST ;Operating Frequency (MHz) = DC - 5000 ;; P1dB (dBm) = 33 ;; Insertion Loss (dB, 1GHz) = 0.80 ;; ISOlation (dB, 1GHz) = 55 ;6L MLPM
|
PEREQRINE
|
| D2229UK |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(2.5W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应2.5W-12.5V-1GHz,单端)
|
SemeLAB
|
| D2202UK |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应5W-12.5V-1GHz,单端)
|
SemeLAB
SEME-LAB[Seme LAB]
|
| D2002UK |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-28V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应5W-28V-1GHz,单端)
|
SemeLAB
Seme LAB
|
| D2218UK |
CAT6 SOL PC PVC WHI 50FT PVC SOLID PATCH CORD UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(20W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应20W-12.5V-1GHz,单端)
METAL GATE RF SILICON FET
|
TT electronics Semelab, Ltd.
TT electronics Semelab Limited
Semelab(Magnatec)
Seme LAB
|
| MC1471 MC1471C MC1741CDR2 MC1741CP1 MC1741CD MC174 |
Internally Compensated, High Performance Operational Amplifier
From old datasheet system
Internally Compensated / High Performance Operational Amplifier
Internally Compensated, High Performance Operational Amplifier
OP-AMP, 1 MHz BAND WIDTH, PDIP8
|
ONSEMI[ON Semiconductor]
|
| TSH690 TSH690ID |
40MHz to 1GHz AMPLIFIER
|
STMicroelectronics
|
| SPT104 |
DC TO 1.1GHz LINEAR AMPLIFIER
|
SPT
|
| MGP20N40CL |
CAP 0.1UF 50V 10% X7R DIP-2 TUBE-PAK S-MIL-PRF-39014/22
SMARTDISCRETES Internally Clamped / N-Channel IGBT
SMARTDISCRETES Internally Clamped, N-Channel IGBT
|
Motorola, Inc.
MOTOROLA[Motorola, Inc]
|
| TC0337A |
SAW Resonator 1GHz SMD 3.8X3.8 mm
|
TAI-SAW TECHNOLOGY CO., LTD.
|
